to-220 parameter symbol value unit collector-base voltage v c b o 100 v collector-emitter voltage v c e o 100 v emitter-base voltage v e b o 5 v collector current i c 3.0 a base current i b 1.0 a total dissipation at p t o t 40 w max. operating junction temperature t j 150 o c storage temperature t s t g -55~150 o c TIP31C / tip32c description parameter symbol test conditions min. typ. max. unit collector cut-off current i c e o v c b =100v, i e =0 0.3 ma emitter cut-off current i e b o v e b =5v, i c =0 1.0 ma collector-emitter sustaining voltage v c e o i c =30ma, i b =0 100 v dc current gain h f e ( 1 ) v c e =4v, i c =1.0a 25 h f e ( 2 ) v c e =4v, i c =3.0a 10 50 collector-emitter saturation voltage v c e ( s a t ) i c =3a,i b =300ma 1.2 v base-emitter saturation voltage v b e ( s a t ) v c e =4v,i c =3.0a 1.8 v current gain bandwidth product f t v c e =10v,i c =500ma 3 mhz complementary silicon power ttransistors product specification it is intented for use in power amplifier and switching applications. electrical characteristics absolute maximum ratings ( ta = 25 c) o ( ta = 25 c) o tiger electronic co.,ltd
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